Sökning: "Low-Frequency noise"

Visar resultat 6 - 10 av 103 avhandlingar innehållade orden Low-Frequency noise.

1. 6. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Författare :Martin Sandén; KTH; []
   Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Sammanfattning : .... LÄS MER

3. 7. Low frequency noise during work. Effects on performance and annoyance

   Författare :Johanna Bengtsson; Göteborgs universitet; []
   Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Low frequency noise; performance; workload; annoyance; cortisol; subjective stress; subjective sensitivity to noise; sound characteristics; frequency balance; modulation frequency;

   Sammanfattning : Aims. Low frequency noise (LFN) is defined as "a noise with a dominant frequency content of 20 to 200 Hz". Common sources of LFN in occupational environments are ventilation, heating and air-conditioning systems, computer network installations and compressors. LÄS MER

4. 8. Low-frequency noise in high-k gate stacks with interfacial layer engineering

   Författare :Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER

5. 9. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

   Författare :Staffan Bruce; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

   Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

7. 10. Fluctuations in Mesoscopic Constrictions

   Författare :Jan Peter Hessling; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low frequency; fluctuations; quantum; noise; 1 f-noise; superconductivity; impurity; point contact; Andreev reflection; shot noise;

   Sammanfattning : In normal and superconducting quantum point contacts there are several sources of fluctuations. Thermally activated impurities in the vicinity of the junction cause the current (or voltage) to change with a typical frequency of the order of one Hz up to a few kHz. LÄS MER