Sökning: "1 f-noise"

Visar resultat 1 - 5 av 22 avhandlingar innehållade orden 1 f-noise.

1. 1. Noise Properties of the Single Electron Transistor

   Författare :Serguei Kafanov; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Low-Frequency noise; Shot Noise; 1 f noise; Single Electron Transistor; charge sensitivity; SET; electrometer; Coulomb blockade; radio-frequency Single Electron Transistor; RF-SET;

   Sammanfattning : The Single Electron Transistor (SET) is a sensitive electrometer with a charge sensitivityultimately limited by noise. In this thesis we present measurements of noiseproperties and charge sensitivity of the radio-frequency Single Electron Transistor. LÄS MER

3. 2. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER

4. 3. Low-frequency noise in high-k gate stacks with interfacial layer engineering

   Författare :Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER

5. 4. Fluctuations in Mesoscopic Constrictions

   Författare :Jan Peter Hessling; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low frequency; fluctuations; quantum; noise; 1 f-noise; superconductivity; impurity; point contact; Andreev reflection; shot noise;

   Sammanfattning : In normal and superconducting quantum point contacts there are several sources of fluctuations. Thermally activated impurities in the vicinity of the junction cause the current (or voltage) to change with a typical frequency of the order of one Hz up to a few kHz. LÄS MER

7. 5. Nanowire Transistors and RF Circuits for Low-Power Applications

   Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

   Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER