Sökning: "Si-doping of Ga1-xInxSb"
Hittade 1 avhandling innehållade orden Si-doping of Ga1-xInxSb.
1. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials
Sammanfattning : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. LÄS MER
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