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1. 6. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers

   Författare :Timo Seppänen; Robert F. Davis; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Thin film; Magnetron Sputter Epitaxy MSE ; Physics; Fysik;

   Sammanfattning : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. LÄS MER