Sökning: "InAs-GaAs"

Visar resultat 6 - 10 av 15 avhandlingar innehållade ordet InAs-GaAs.

  1. 6. Spectroscopy of semiconductor quantum dots

    Författare :Mats Larsson; James L. Merz; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. LÄS MER

  3. 7. Semiconductor Quantum Optics at Telecom Wavelengths

    Författare :Katharina Zeuner; Val Zwiller; Klaus D. Jöns; Stephan Reitzenstein; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Optik och fotonik; Optics and Photonics;

    Sammanfattning : Quantum technologies are an expanding field in physics and engineering concerning the development of protocols and devices that enable augmented or novel applications based on quantum mechanics. This includes amongst others quantum computation and quantum communication. LÄS MER

  4. 8. Quantum technologies for secure communications

    Författare :Junior Ricardo Gonzales Ureta; Ana Predojević; Marcus Huber; Stockholms universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Quantum technologies; quantum information; quantum optics; Physics; fysik;

    Sammanfattning : Quantum technologies promise to revolutionize a variety of fields such as metrology, cryptography or computing, among others. The resources that quantum mechanics offers allow us to design faster optimization algorithms, to improve security in communications, and to measure quantities beyond the grasp of current technology. LÄS MER

  5. 9. III–V Nanowire Surfaces

    Författare :Martin Hjort; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low energy electron microscopy; scanning tunneling spectroscopy; scanning tunneling microscopy; surface; III–V semiconductor materials; nanowire; photoemission electron microscopy; photoelectron spectroscopy; Fysicumarkivet A:2014:Hjort;

    Sammanfattning : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). LÄS MER

  7. 10. Time-resolved optical characterisation of defect-rich semiconductors

    Författare :Andreas Gaarder; KTH; []
    Nyckelord :;

    Sammanfattning : This thesis explores carrier trapping and recombination indefect-rich semiconductors, and methods for materialcharacterisation. Optimal manufacturing parameters areestablished for materials to be used in the ultrafast devicesneeded for future telecommunication applications. LÄS MER