Sökning: "III-V compound semiconductor"

Visar resultat 1 - 5 av 16 avhandlingar innehållade orden III-V compound semiconductor.

  1. 1. Adventures of III-V Semiconductor Surfaces

    Författare :Sandra Benter; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Sammanfattning : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. LÄS MER

  3. 2. Atomic and Electronic Structure of III-V Semiconductor Surfaces

    Författare :Örjan Olsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; semiconductor; GaAs; photoelectron; scanning tunneling microscopy; valence band; core level; reconstruction; InAs; surface; InSb;

    Sammanfattning : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. LÄS MER

  4. 3. The band offset and the critical layer thickness in III-V compound semiconductor heterostructures

    Författare :Shu Min Wang; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; interface morphology; molecular beam epitaxy; band offset; transmission electron microscopy; InGaAs; strain; photoluminescence; critical layer thickness; quantum wells; heterostructures; III-V compounds;

    Sammanfattning : .... LÄS MER

  5. 4. Metall organic vapour phase epitaxy for advanced III-V devices

    Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

  7. 5. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

    Sammanfattning : .... LÄS MER