Sökning: "III-V compound semiconductors"

Visar resultat 1 - 5 av 10 avhandlingar innehållade orden III-V compound semiconductors.

  1. 1. Adventures of III-V Semiconductor Surfaces

    Författare :Sandra Benter; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Sammanfattning : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. LÄS MER

  3. 2. III-V MOSFETs for High-Frequency and Digital Applications

    Författare :Cezar Zota; Nanoelektronik; []
    Nyckelord :III-V; MOSFET; Transistor;

    Sammanfattning : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. LÄS MER

  4. 3. Metall organic vapour phase epitaxy for advanced III-V devices

    Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

  5. 4. Atomic and Electronic Structure of III-V Semiconductor Surfaces

    Författare :Örjan Olsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; semiconductor; GaAs; photoelectron; scanning tunneling microscopy; valence band; core level; reconstruction; InAs; surface; InSb;

    Sammanfattning : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. LÄS MER

  7. 5. High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications

    Författare :Himanshu Kataria; Sebastian Lourdudoss; Matty Caymax; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells. LÄS MER