Sökning: "retrograde channel structure"

Hittade 1 avhandling innehållade orden retrograde channel structure.

1. 1. Modeling and characterization of novel MOS devices

   Författare :Stefan Persson; KTH; []
   Nyckelord :MOSFET; SiGe; high-k dielectric; metal gate; mobility; charge sheet model; retrograde channel structure; intrinsic charge; intrinsic capacitance; contact resistivity;

   Sammanfattning : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. LÄS MER