Avancerad sökning

Hittade 2 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Buffer Related Dispersive Effects in Microwave GaN HEMTs

   Författare :Johan Bergsten; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

   Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER

3. 2. Doping effects on the structural and optical properties of GaN

   Författare :Sergey Khromov; Galia Pozina; Lars Hultman; Thierry Bretagnon; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. LÄS MER