Sökning: "random deposition process"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden random deposition process.

1. 1. Particle Deposition Studies in a Laminar Wall Jet - The Hydrodynamic Influence on the Kinetics of Colloidal Deposition

   Författare :Anders Göransson; Livsmedelsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; shielding function; surface blocking; total internal reflection microscopy; laminar wall jet; random sequential adsorption; colloidal deposition; Food and drink technology; Livsmedelsteknik;

   Sammanfattning : In the research area of cleaning and process hygiene it is important to understand the underlying mechanisms behind the deposition of particles and macromolecules onto surfaces. The deposition process is described as the transport of particles to the surface followed by attachment. LÄS MER

3. 2. Quantitative microscopy of coating uniformity

   Författare :Christina Dahlström; Tetsu Uesaka; Magnus Norgren; Mittuniversitetet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Coating uniformity; coating microstructure uniformity; base sheet effects; argon ion beam milling; scanning electron microscopy; image analysis; binder distributions; autocorrelation analysis; random deposition process; simulation;

   Sammanfattning : Print quality demands for coated papers are steadily growing, and achieving coating uniformity is crucial for high image sharpness, colour fidelity, and print uniformity. Coating uniformity may be divided into two scales: coating thickness uniformity and coating microstructure uniformity, the latter of which includes pigment, pore and binder distributions within the coating layer. LÄS MER

4. 3. SiC CMOS and memory devices for high-temperature integrated circuits

   Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

5. 4. Nanoparticle Self-assembly on Prefabricated Nano Strucutres

   Författare :Johnas Eklöf; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanofabrication; Nanoparticles; single molecular electronics; Self-assembly;

   Sammanfattning : The demand for more powerful computers have been increasing ever since the first semiconducting devices were invented in the second half of the 20th century. The demand for an increase in computing power have escalated since the start of modern computer technology, however conventional techniques are reaching the limits regarding the downscaling of semiconducting based logic circuits. LÄS MER

7. 5. CVD and ALD in the Bi-Ti-O system

   Författare :Mikael Schuisky; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Halide-CVD; ALD; Bismuth titanate; Bi4Ti3O12; Titanium oxide; TiO2; Bismuthoxide; Bi2O2.33; Epitaxy; QCM.; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

   Sammanfattning : Bismuth titanate Bi4Ti3O12, is one of the bismuth based layered ferroelectric materials that is a candidate for replacing the lead based ferroelectric materials in for instance non-volatile ferroelectric random access memories (FRAM). This is due to the fact that the bismuth based ferroelectrics consists of pseudo perovskite units sandwiched in between bismuth oxide layers, which gives them a better fatigue nature. LÄS MER