Sökning: "metallisation"

Hittade 5 avhandlingar innehållade ordet metallisation.

  1. 1. SiC CMOS and memory devices for high-temperature integrated circuits

    Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

  3. 2. Physical and chemical surface modifications of a polyimide to enhance its adhesion to silver

    Författare :Åsa Sandgren; KTH; []
    Nyckelord :Polyimide; Polymer surface modification; Polymer metallisation; Plasma treatment; Animation rwaction; Nitration reaction; Silver sputtering; Polymer-metal adhesion; Wet-procedure; Sulfonation reaction; Chemical etching;

    Sammanfattning : .... LÄS MER

  4. 3. The reactive formation of TiSi2in the presence of refractory metals

    Författare :Aliette Mouroux; KTH; []
    Nyckelord :;

    Sammanfattning : Titanium disilicide (TiSi2) has been the favoured material for contactmetallisation in recent Si devices. The formation of TiSi2usually begins with the high resistivity C49 phaseas a result of the Ti-Si interaction at about 300-550 °Cand finishes with the low resistivity C54 phase through theC49-C54 phase transformation at about 700 °C. LÄS MER

  5. 4. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers tekniska högskola; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

  7. 5. An SBU fully additive production approach for Board-level Electronics Packaging (SBU-CBM Method)

    Författare :Sarthak Acharya; Jerker Delsing; Shailesh Singh Chouhan; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cyberfysiska system; Cyber-Physical Systems;

    Sammanfattning : The worldwide electronics market is focusing on developing innovative technologies that can lead to denser, more resilient, and tighter board-level integration. The consumer electronics market is trending toward miniaturization, with HDI-PCBs dominating. Electronics shrinking and scaling technology is the prime concern of all manufacturers. LÄS MER