Sökning: "gainnas"

Visar resultat 6 - 10 av 10 avhandlingar innehållade ordet gainnas.

  1. 6. Processing technologies for long-wavelength vertical-cavity lasers

    Författare :Fredrik Salomonsson; KTH; []
    Nyckelord :VCSEL; vertical-cavity laser; semiconductor laser; long-wavelength; DBR; oxidation; wafer fusion; InGaAs; semiconductor processing;

    Sammanfattning : Vertical-cavity surface-emitting lasers (VCSELs) areattractive as potential inexpensive high-performance emittersfor fibre-optical communication systems. Their surface-normalemission together with the small dimensions are beneficial forlow-cost fabrication since it allows on-wafer testing,simplified packaging and effective fibre-coupling. LÄS MER

  3. 7. Long-Wavelength Vertical-Cavity Lasers : Materials and Device Analysis

    Författare :Sebastian Mogg; KTH; []
    Nyckelord :VCL; VCSEL; vertical-cavity laser; semiconductor laser; long-wavelength; DBR; characterization; analysis; InP; InGaAs; quantum well; numerical modeling;

    Sammanfattning : Vertical-cavity lasers (VCLs) are of great interest as lightsources for fiber-optic communication systems. Such deviceshave a number of advantages over traditional in-plane laserdiodes, including low power consumption, efficient fibercoupling, on-chip testability, as well as potential low-costfabrication and packaging. LÄS MER

  4. 8. Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates

    Författare :Rickard Marcks von Würtemberg; Mattias Hammar; Markus Amann; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; VCSEL; Selective Area Epitaxy; Epitaxial regrowth; Laser; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Vertical cavity surface emitting lasers (VCSELs) are today a commodity on the short wavelength laser market due to the ease with which they are manufactured. Much effort has in the last decade been directed towards making long wavelength VCSELs as successful in the marketplace. LÄS MER

  5. 9. Metamorphic Heterostructures and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Sammanfattning : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. LÄS MER

  7. 10. Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers

    Författare :Zhenzhong Zhang; Mattias Hammar; Nicolae Chitica; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; VCSEL MOVPE InGaAs GaAs quantum wells; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. LÄS MER