Sökning: "Epitaxial regrowth"
Visar resultat 1 - 5 av 9 avhandlingar innehållade orden Epitaxial regrowth.
1. Metall organic vapour phase epitaxy for advanced III-V devices
Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER
2. Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates
Sammanfattning : Vertical cavity surface emitting lasers (VCSELs) are today a commodity on the short wavelength laser market due to the ease with which they are manufactured. Much effort has in the last decade been directed towards making long wavelength VCSELs as successful in the marketplace. LÄS MER
3. Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces
Sammanfattning : The superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. LÄS MER
4. New Methods in the growth of InP on Si and Regrowth of Semi-insulating InP for Photonic Devices
Sammanfattning : This thesis addresses new methods in the growth of indium phosphide on silicon for enabling silicon photonics and nano photonics as well as efficient and cost-effective solar cells. It also addresses the renewal of regrowth of semi-insulating indium phosphide for realizing buried heterostructure quantum cascade lasers with high power and wall plug efficiency for sensing applications. LÄS MER
5. Compound semiconductor materials and processing technologies for photonic devices and photonics integration
Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER