Sökning: "birch."
Visar resultat 11 - 15 av 262 avhandlingar innehållade ordet birch..
11. Materials Science of Multilayer X-ray Mirrors
Sammanfattning : This thesis treats the reflective and structural properties of multilayer structures. Soft X-ray multilayer mirrors intended as near-normal incidence reflective optics and polarizers in the water window (λ=2.4-4.4 nm) are the main focus. LÄS MER
12. Growth and Phase Stability Studies of Epitaxial Sc-Al-N and Ti-Al-N Thin Films
Sammanfattning : ¨This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deep into the Ti-Al-N system and to explore novel Sc-Al-N compounds. Thin films were epitaxially grown by reactive dual magnetron sputtering from elemental targets onto single-crystal substrates. LÄS MER
13. Reactive Magnetron Sputter Deposition and Characterization of Thin Films from the Ti-Al-N and Sc-Al-N Systems
Sammanfattning : This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deeper into the Ti-Al-N system and to explore the novel Sc-Al-N system. Thin films were epitaxially grown by reactive magnetron sputtering from elemental targets onto single-crystal substrates covered with a seed layer. LÄS MER
14. CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions
Sammanfattning : Boron-carbon thin films enriched with 10B are potential neutron converting layers for 10B-based solid state neutron detectors given the good neutron absorption cross section of 10B atoms in thin films. The common neutron-transparent base material, Al (melting point 660 °C), limits the deposition temperature and the use of chlorinated precursors forming corrosive by-products such as HCl. LÄS MER
15. Magnetron Sputter Epitaxy of GaN
Sammanfattning : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. LÄS MER