Sökning: "P-n junction"
Visar resultat 1 - 5 av 21 avhandlingar innehållade orden P-n junction.
1. Noise Aspects of some Si-based One Port Devices and Carbon Nanotubes
Sammanfattning : The p-n junctions and Schottky diodes based on Si1-xGex and SiC are of great importance in modern electronic applications, such as microwave detectors and mixers. Carbon nanotubes (CNTs) have appeared recently as an attractive new class of materials with a reduced dimensionality, and proposed as building blocks for nanoelectronic technology. LÄS MER
2. Scanning capacitance microscopy for semiconductor characterisation
Sammanfattning : .... LÄS MER
3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER
4. Junction Engineering in Nanostructured Optoelectronic Devices
Sammanfattning : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. LÄS MER
5. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration
Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER
