Sökning: "epitaxial growth"

Visar resultat 1 - 5 av 201 avhandlingar innehållade orden epitaxial growth.

1. 1. Epitaxial growth of semiconductor nanowires

   Författare :Ann Persson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

   Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER

3. 2. InGaAs-based quantum dots for infrared imaging applications : growth and characterisation

   Författare :Linda Höglund; Per-Olof Holz; Linköpings universitet; []
   Nyckelord :TECHNOLOGY; TEKNIKVETENSKAP;

   Sammanfattning : In this thesis, results are presented from the development of quantum dot (QD) based infrared photodetectors (IPs). This includes epitaxial growth of QDs, investigations of the structural, optical and electronic properties of the QD based material as well as characterisation of the resulting components. LÄS MER

4. 3. ZrB2 Thin Films : Growth and Characterization

   Författare :Lina Tengdelius; Hans Högberg; Urban Forsberg; Gregory S. Girolami; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 μΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. LÄS MER

5. 4. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

7. 5. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al_{2< sub>O3< sub>}; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

   Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER