Sökning: "III-V materials"
Visar resultat 16 - 20 av 111 avhandlingar innehållade orden III-V materials.
16. Fabrication of Low-Dimensional Structures in III-V Semiconductors
Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER
17. Surfaces and interfaces of low dimensional III-V semiconductor devices
Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER
18. Free-space cavity optomechanical systems on a chip with III-V heterostructures
Sammanfattning : Cavity optomechanics examines the mutual interaction between light and mechanical motion for controlling mechanical resonators down to the quantum regime. A major challenge in the field of cavity optomechanics remains accessing a strong interaction between the light field and mechanics on the level of single quanta. LÄS MER
19. Top-down Fabrication Technologies for High Quality III-V Nanostructures
Sammanfattning : III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. LÄS MER
20. Epitaxial III-V/Si heterojunctions for photonic devices
Sammanfattning : Monolithic integration of III-V materials on silicon is of great interest for efficient electronic-photonic integrated devices and multijunction solar cells on silicon. However, defect formation in the heteroepitaxial layers due to lattice mismatch, thermal mismatch, and polarity mismatch makes it a great challenge. LÄS MER
