Sökning: "Hall mobility"

Visar resultat 11 - 15 av 24 avhandlingar innehållade orden Hall mobility.

  1. 11. III-V Nanowires for High-Speed Electronics

    Författare :Fredrik Lindelöw; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; Hall; DC; RF; Nanowire; MOSFET; Hall; DC; RF;

    Sammanfattning : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. LÄS MER

  3. 12. Characterization of Si-based heterostructures prepared by MBE and containing Ge, C, or Er

    Författare :Kenneth B. Joelsson; Karl Eberl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon molecular beam epitaxy (MBE) has been used to prepare various Si-based structures.The first part of the work concerns hole transport in Si1-xGex layers for Ge contents 0≤x≤0.36 and B-doping concentrations 2-7.5x1018 cm-3. LÄS MER

  4. 13. Optical studies of carrier transport and fundamental absorption in 4H-SiC and Si

    Författare :Paulius Grivickas; KTH; []
    Nyckelord :;

    Sammanfattning : The Fourier transient grating (FTG) technique and a novelspectroscopic technique, both based on free carrier absorption(FCA) probing, have been applied to study the carrierdiffusivity in 4H-SiC and the fundamental absorption edge in4H-SiC and Si, respectively. FTG is a unique technique capable of detecting diffusioncoefficient dependence over a broad injection interval rangingfrom minority carrier diffusion to the ambipolar case. LÄS MER

  5. 14. P-type and polarization doping of GaN in hot-wall MOCVD

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER

  7. 15. Electronic Characterization of CVD Diamond

    Författare :Saman Majdi; Carl Hemmingsson; Uppsala universitet; []
    Nyckelord :TECHNOLOGY; TEKNIKVETENSKAP;

    Sammanfattning : Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. LÄS MER