Sökning: "C-face SiC"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden C-face SiC.
1. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures
Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER
2. Electronic structure of some SiC and Be surfaces
Sammanfattning : Silicon carbide (SiC) is a wide-bandgap semiconductor whose properties make it a good candidate for high-power, high-voltage, high-temperature and highfrequency devices. Beryllium (Be) is a metal with some unusual electronic properties. LÄS MER
3. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER
4. Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces
Sammanfattning : The superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. LÄS MER
5. Sublimation Growth and Performance of Cubic Silicon Carbide
Sammanfattning : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. LÄS MER
