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Hittade 3 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Monolithic Integrated Oscillators - Phase Noise Analysis and Inductor Modeling

   Författare :Niklas Troedsson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic inductor; Monolithic integrated oscillator; CMOS; Bluetooth; low voltage; voltage controlled oscillator; Elektronik och elektroteknik; Electronics and Electrical technology; inductor modeling; phase noise analysis; quadrature voltage controlled oscillator;

   Sammanfattning : This doctoral dissertation studies voltage controlled oscillators (VCOs) that operate at low supply voltages. Due to smaller transistor sizes and lower supply voltage ratings with every new CMOS technology, voltage headroom is diminishing. LÄS MER

3. 2. Multi-scale analyses of cycled industrial-scale packed-bed adsorbers

   Författare :Adam Jareteg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : Separations processes account for 10%–15% of the total energy consumed in process industries worldwide. In such separation processes, it is common to use activated carbon in packed-bed adsorbers, to remove undesired substances from a process stream. LÄS MER

4. 3. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

   Författare :Zhongyunshen Zhu; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. LÄS MER