Sökning: "chloride"
Visar resultat 16 - 20 av 488 avhandlingar innehållade ordet chloride.
16. On Mesoscale Modelling of Coupled Chloride-Moisture Transport in Concrete
Sammanfattning : The service life behaviour of concrete structures is highly influenced by the ingress of chloride ions. At sufficiently high concentrations, chloride ions can initiate corrosion of embedded reinforcement bars, which may substantially reduce the structure's bearing capacity and ultimately lead to structural collapse. LÄS MER
17. Evaluation of Dust Suppressants for Gravel Roads: Methods Development and Efficiency Studies
Sammanfattning : Application of the proper dust suppressant to a gravel road ensures road safety and riding comfort as well as creating a cleaner and healthier environment for residents in buildings adjacent to the road. It also reduces the need and cost for vehicle repair, road maintenance activities, and aggregate supplementation. LÄS MER
18. Monitoring transport and fate of de-icing salt in the roadside environment : Modelling and field measurements
Sammanfattning : Roads and traffic are a major non-point source of pollutants and may have severe impacts on surface water, groundwater, soil and vegetation. In cold climates, de-icing salt is one such pollutant that may cause increased chloride concentrations and induce other effects on the environment. LÄS MER
19. Evaluation of Dust Suppressants for Gravel Roads : Methods Development and Efficiency Studies
Sammanfattning : Approximately 75 percent (300 000 km) of the total Swedish road network and 20 percent(20 000 km) of the national road network consists of gravel roads. One of the most significantproblems associated with gravel roads is traffic-generated dust emission, which contributes tothe deterioration of the road surface and acts as a major source of particulate matter releasedinto the atmosphere, thereby involving public economics, road safety, human health, andenvironmental quality. LÄS MER
20. Chloride-based Silicon Carbide CVD
Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER