Sökning: "SIHF"
Hittade 4 avhandlingar innehållade ordet SIHF.
1. Fabrication, Simulation and Performance of Ultra-Thin Silicon Detectors-Development of a Detection System for Living Cell Irradiation
Sammanfattning : For the development of a Single–Ion Hit Facility (SIHF) for living cells irradiation at the Lund Ion Beam Analysis facility (LIBAF), newly developed pre-cell detectors have been investigated. These detectors can determine the number of ions reaching the sample. Central to the thesis is their fabrication and characterization. LÄS MER
2. Fabrication and Characterisations of New Ultra-thin Silicon Detectors as Pre-Cell Hit Detectors for a Cell Irradiation Facility at LIBAF
Sammanfattning : For the development of single–ion irradiation system for living cells at the Lund Ion Beam Analysis facility (LIBAF) newly developed pre-cell (PC) detectors have been investigated. Central to the thesis is the fabrication and initial characterization of more than 100 ultra-thin silicon detectors having different thicknesses down to 5 μm with active areas ranging from 0. LÄS MER
3. Single-Proton Irradiation of Living Cells - Development of New Tools for Low-Dose Radiation Research
Sammanfattning : A Single-Ion Hit Facility (SIHF) consists of a custom-build facility based in particle accelerators which offers irradiation controlling the number of delivered particles with a precise targeting localization. The irradiation spot can be confined down to the nanometre scale allowing the irradiation of subcellular compartments with a single particle. LÄS MER
4. Fluorinated SiC CVD
Sammanfattning : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. LÄS MER