Sökning: "GaN HEMT"
Visar resultat 11 - 15 av 40 avhandlingar innehållade orden GaN HEMT.
11. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design
Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER
12. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators
Sammanfattning : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. LÄS MER
13. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER
14. GaN HEMT Based Highly Integrated Active Antenna Element for Millimeter-Wave Array Transmitters
Sammanfattning : .... LÄS MER
15. Growth and characterization of SiC and GaN
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER