Sökning: "GaN HEMT"

Visar resultat 6 - 10 av 40 avhandlingar innehållade orden GaN HEMT.

  1. 6. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise

    Författare :Mikael Hörberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low frequency noise; resonator coupling; cavity resonator; GaN HEMT; MMIC; reflection oscillator; phase noise;

    Sammanfattning : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. LÄS MER

  3. 7. Advanced III-Nitride Technology for mm-Wave Applications

    Författare :Anna Malmros; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER

  4. 8. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

    Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER

  5. 9. High Efficiency Microwave Amplifiers and SiC Varactors Optimized for Dynamic Load Modulation

    Författare :Christer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear measurements; power amplifiers; load modulation; GaN; SiC; varactors; HEMT; wide bandgap technology; energy efficiency;

    Sammanfattning : The increasing use of mobile networks as the main source of internet connectivity is creating challenges in the infrastructure. Customer demand is a moving target and continuous hardware developments are necessary to supply higher data rates in an environmentally sustainable and cost effective way. LÄS MER

  7. 10. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER