Sökning: "GaAs pHEMT"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden GaAs pHEMT.

  1. 1. 60 GHz Mixer and Multifunctional MMICs in GaAs pHEMT and mHEMT technologies

    Författare :Sten Gunnarsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Image reject mixer; Broadband wireless communication; Single-chip; Multifunctional; Mixer; Balanced resistive mixer; GaAs; Dual-quadrature mixer; 60 GHz; Receiver; pHEMT; MMIC; High data-rate; Double balanced Gilbert mixer; mHEMT; Transmitter; V-band;

    Sammanfattning : In recent years, the 60 GHz band has gained increased academic and commercial interest mainly due to the relative large amount of license free and little used frequency spectrum located in vicinity of 60 GHz. The exact locations of these free frequency bands varies locally but the 5962 GHz band overlap around the world and is therefore a true world wide license free band. LÄS MER

  3. 2. Integrated VCOs in Gallium Arsenide HEMT technologies with a novel varactor structure

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; design; Oscillator; HEMT; pHEMT; MMIC; VCO; varactor; GaAs; mHEMT;

    Sammanfattning : This thesis presents results on metamorphic and pseudomorpic GaAs HEMT based Voltage Controlled Oscillators and a novel high-Q varactor structure, used in the VCOs, together with a straightforward extraction procedure for the varactors.Theory and fundamentals around LC-oscillators with oscillator criteria, phase noise and different topologies are given as background together with VCO phase noise measurement methods and an overview on device flicker noise; its physical origin and measurement. LÄS MER

  4. 3. Design of High Linearity MMIC Power Amplifiers for Space Applications

    Författare :Oliver Silva Barrera; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; pHEMT; GaAs; reliability; Power amplifier; non-linear modeling; Junction temperature; C-Band; Infrared measurements;

    Sammanfattning : The high linearity performance in satellite transmitters is receiving increasing attention due to the demands of higher data rates in satellite communication links. During the last decade, digital communication links in satellite system have been replacing the previous analog links increasing the channel efficiency by allocating multiple carriers in the transponder bandwidth. LÄS MER

  5. 4. Mixers and Multifunctional MMICs for Millimeter-Wave Applications

    Författare :Sten Gunnarsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; G-band; double-balanced Gilbert mixer; sub-harmonically pumped resistive mixer; pHEMT; receiver; image reject mixer; dual-quadrature mixer; balanced resistive mixer; resistive mixer; 220 GHz; high data rate; drain mixer; 53 GHz; single-chip; V-band.; radiometer; mixer; broadband wireless communication; multifunctional; MMIC; GaAs; mHEMT; transmitter; 60 GHz;

    Sammanfattning : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. LÄS MER

  7. 5. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER