Sökning: "Al_{2< sub>O3< sub>"}

Hittade 2 avhandlingar innehållade orden Al_{2< sub>O3< sub>}.

1. 1. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al_{2< sub>O3< sub>}; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

   Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER

3. 2. The microstructure of chemically vapour deposited AL2O3 coatings

   Författare :Mats Halvarsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; microstructure; alpha; phase transformation; cemented carbides; multilayers; -Al_{2< sub>O3< sub>}; CVD; kappa; TEM; -Al_{2< sub>O3< sub>};

   Sammanfattning : .... LÄS MER