Sökning: "pattern transfer lithography"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden pattern transfer lithography.

1. 1. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

3. 2. Block Copolymer Nanolithography for Sub-50 nm Structure Applications

   Författare :Anette Löfstrand; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Sampolymer; riktad självorganisation; ytrekonstruktion; mönsteröverföring; sekventiell infiltrationssyntes; neutronreflektometri; Block copolymer; Directed self-assembly; Surface reconstruction; Pattern transfer; Sequential infiltration synthesis; Neutron reflectometry; Fysicumarkivet A:2021:Löfstrand;

   Sammanfattning : As high technology device patterns are continuing to move towards decreasing critical dimensions and increasing pattern density, there is a need for lithography to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single digit nanometer resolution, has a pattern periodicity of about 7-200 nm, and easily scales up to large area at a low cost. LÄS MER

4. 3. Nanopatterning by Swift Heavy Ions

   Författare :Marek Skupinski; Klas Hjört; Jens Jensen; Christina Trautmann; Uppsala universitet; []
   Nyckelord :Materials science; swift heavy ions; lithography; nanopatterning; self-assembly; Materialvetenskap;

   Sammanfattning : Today, the dominating way of patterning nanosystems is by irradiation-based lithography (e-beam, DUV, EUV, and ions). Compared to the other irradiations, ion tracks created by swift heavy ions in matter give the highest contrast, and its inelastic scattering facilitate minute widening and high aspect ratios (up to several thousands). LÄS MER

5. 4. Fabrication of Low-Dimensional Structures in III-V Semiconductors

   Författare :Ivan Maximov; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; plasma; etching; aerosol; lithography; quantum dots; quantum well wires; quantum point contact; damage; luminescence; Fysicumarkivet A:1997:Maximov; Halvledarfysik; Semiconductory physics;

   Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER

7. 5. Nanoimprint Lithography Based Nanoelectromechanical Device Fabrication

   Författare :Gang Luo; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : This thesis presents studies concerning the development of nanoimprint lithography technology, nanoimprint lithography-based nanofabrication, as well as the production of NEMS devices and their characterization. It can be divided into the following parts: The first part introduces different NIL stamp fabricating methods and processes. LÄS MER