Sökning: "field-effect transistor"

Visar resultat 41 - 45 av 97 avhandlingar innehållade orden field-effect transistor.

1. 41. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Författare :Anton E. O. Persson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

3. 42. Polyelectrolyte-Based Capacitors and Transistors

   Författare :Oscar Larsson; Xavier Crispin; Janelle Leger; Linköpings universitet; []
   Nyckelord :Organic electronics; Polarization; Polyelectrolyte; Transistor; Polymer; Sensor; Capacitor; NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Polymers are very attractive materials that can be tailored for specific needs and functionalities. Based on their chemical structure, they can for instance be made electrically insulating or semiconducting with specific mechanical properties. LÄS MER

4. 43. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

5. 44. Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters

   Författare :Keijo Jacobs; Hans-Peter Nee; Staffan Norrga; Marc Hiller; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; HVDC converters; voltage source converters; modular multilevel converters; submodule topologies; metal-oxide-semiconductor field-effect transistor MOSFET ; insulated-gate bipolar-transistor IGBT ; power semiconductor devices; high-voltage; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In order to transition to renewable energy sources and simultaneously meet the increasing demand for electrical energy, highly flexible and efficient grids are required. High-voltage direct-current (HVDC) transmission and grids are foreseen to be a vital part of the future electricity grid. LÄS MER

7. 45. Nanowire Transistors and RF Circuits for Low-Power Applications

   Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

   Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER