Sökning: "bottom-up building modelling"

Visar resultat 6 - 8 av 8 avhandlingar innehållade orden bottom-up building modelling.

  1. 6. Modelling energy demand in the buildings sector within the EU

    Författare :Eoin Ó Broin; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Residential; EU; Efficiency; Econometrics; Decomposition; Heating; Scenarios;

    Sammanfattning : In the on-going effort within the EU to tackle greenhouse gas emissions and secure future energy supplies, the buildings sector is often referred to as offering a large potential for energy savings. The aim of this thesis is to produce scenarios that highlight the parameters that affect the energy demands and thus potentials for savings of the building sector. LÄS MER

  3. 7. Extracellular matrix mimetic multi-functional scaffolds for tissue engineering and biomedical applications

    Författare :Ranjithkumar Ravichandran; Jaywant Phopase; Anthony Turner; Ann-Christine Albertsson; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Regeneration of functional tissues or complex organs via the combination of viable cells, biomimetic scaffolds, morphogenic factors, and external biophysical cues are the principle aims of Tissue Engineering (TE). TE relies on the use of artificial 3D scaffolds that can mimic the microenvironment of native tissue to harness the regenerative potential of cells. LÄS MER

  4. 8. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Författare :Adam Jönsson; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER