Sökning: "Schottky diodes"

Visar resultat 6 - 10 av 50 avhandlingar innehållade orden Schottky diodes.

  1. 6. Silicon carbide microwave Schottky diodes and MESFETs

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : .... LÄS MER

  3. 7. Modelling and Characterisation of Terahertz Planar Schottky Diodes

    Författare :Aik-Yean Tang; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with the modelling and characterisation of THz planar Schottky diodes, focusing on analyses of geometry-dependent electrical parasitics and the thermal management of the diode chip. Moving towards higher operating frequencies, the diode performance degrades due to high frequency losses, parasitic couplings and self-heating effects. LÄS MER

  4. 8. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  5. 9. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  7. 10. Silicon carbide field-effect devices studied as gas sensors for exhaust gas monitoring

    Författare :Peter Tobias; Ignaz Eisele; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; high temperature; gas sensors; field effect devices; MISdevices; Schottky diodes; experimental design; reaction kinetics; mass transport; car exhaust; multipoint injection; response times; cylinder specific; on-board diagnosis;

    Sammanfattning : Metal-insulator-silicon carbide (MIS) structures have been studied as gas sensors. We have investigated how the sensors detect gases, how fast they do that, and how they could be used for exhaust gas monitoring.We have prepared simple field-effect devices, MIS-capacitors and Schottky diodes, on silicon carbide with platinum gates. LÄS MER