Sökning: "NiSi"

Visar resultat 11 - 15 av 16 avhandlingar innehållade ordet NiSi.

1. 11. High-Resolution Studies of Silicide-films for Nano IC-Components

   Författare :Tobias Jarmar; Fredric Ericson; Ulf Smith; Terje Finstad; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; thin films; titaniumsilicide; nickel-germanosilicide; ternary phase diagram; textured germanosilicide; high resolution materials analysis; Materialvetenskap; Materials science; Teknisk materialvetenskap;

   Sammanfattning : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. LÄS MER

3. 12. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films

   Författare :Philipp Mika Wolf; Daniel Primetzhofer; Zhen Zhang; Eduardo Pitthan; Tuan Thien Tran; Anders Hallén; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; ion scattering; in situ characterization; nickel silicide; ultrathin metal silicide; epitaxial silicide; surface analysis; titanium based films; high-resolution depth profiling;

   Sammanfattning : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. LÄS MER

4. 13. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride

   Författare :David Michael Martin; J. Olsson; I. Katardjiev; S. Gevorgian; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlN; FBAR; FPAR; CMP; SOI; Nickel Silicide; Wafer Bonding; Electronics; Elektronik; Elektronik; Electronics;

   Sammanfattning : In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. LÄS MER

5. 14. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

   Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

   Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

7. 15. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Författare :Erik Haralson; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER