Sökning: "Nickel Silicide"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden Nickel Silicide.

  1. 1. Tailoring and Characterisation of Nickel Silicide Thin Films on Silicon Carbide

    Författare :S. A. Perez-Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thin films; silicon carbide; nickel silicide; characterisation;

    Sammanfattning : .... LÄS MER

  3. 2. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films

    Författare :Philipp Mika Wolf; Daniel Primetzhofer; Zhen Zhang; Eduardo Pitthan; Tuan Thien Tran; Anders Hallén; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; ion scattering; in situ characterization; nickel silicide; ultrathin metal silicide; epitaxial silicide; surface analysis; titanium based films; high-resolution depth profiling;

    Sammanfattning : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. LÄS MER

  4. 3. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers tekniska högskola; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

  5. 4. High-Resolution Studies of Silicide-films for Nano IC-Components

    Författare :Tobias Jarmar; Fredric Ericson; Ulf Smith; Terje Finstad; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; thin films; titaniumsilicide; nickel-germanosilicide; ternary phase diagram; textured germanosilicide; high resolution materials analysis; Materialvetenskap; Materials science; Teknisk materialvetenskap;

    Sammanfattning : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. LÄS MER

  7. 5. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Författare :Erik Haralson; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER