Sökning: "Metallization"

Visar resultat 11 - 15 av 38 avhandlingar innehållade ordet Metallization.

  1. 11. An SBU fully additive production approach for Board-level Electronics Packaging (SBU-CBM Method)

    Författare :Sarthak Acharya; Jerker Delsing; Shailesh Singh Chouhan; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cyberfysiska system; Cyber-Physical Systems;

    Sammanfattning : The worldwide electronics market is focusing on developing innovative technologies that can lead to denser, more resilient, and tighter board-level integration. The consumer electronics market is trending toward miniaturization, with HDI-PCBs dominating. Electronics shrinking and scaling technology is the prime concern of all manufacturers. LÄS MER

  3. 12. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    Författare :Katarina Smedfors; Carl-Mikael Zetterling; Niklas Rorsman; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. LÄS MER

  4. 13. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Författare :Erik Danielsson; KTH; []
    Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

  5. 14. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits

    Författare :Lukas Jablonka; Zhen Zhang; Shi-Li Zhang; Fabrice Nemouchi; Uppsala universitet; []
    Nyckelord :Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. LÄS MER

  7. 15. Vapor phase deposition of WO and WC

    Författare :Per Tägtström; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; vapor deposition; ALE; CVD; tungsten oxide; epitaxy; nanocrystals; tungsten carbide; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : WO3 and WC are two compounds that are widely used for a number of different thin film applications. In this thesis, these compounds have been deposited using two different deposition methods: atomic layer epitaxy (ALE) and chemical vapor deposition (CVD). LÄS MER