Sökning: "LOCOS"

Hittade 5 avhandlingar innehållade ordet LOCOS.

  1. 1. Design and fabrication of hidden hinge monocrystalline silicon micromirrors for maskless lithography

    Författare :Martin Bring; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; isotropic etching; LOCOS; micromirror; maskless lithography; chevron notch; low temperature transfer bonding; fracture toughness;

    Sammanfattning : Micromirror-based maskless lithography has recently received attention as an attractive candidate to tackle challenges associated with the continued de-vice scaling in the semiconductor industry. The micromirrors work by diffrac-tion and the requirements on planarity are very tough, e.g. peak-to-valley dif-ferences of a few nanometers. LÄS MER

  3. 2. Pentas qvinta quæstionum theologicarum, in regia Upsaliensium academia, 22. Septembris, studiosis, locos Hafenrefferianis [anaskeyasikōs] disputantibus, propositarum, sub præsidio Laurentii Olai Wallii, ... respondente Andrea Bothvidi Ostrogotho. Et præsidis sumptibus impressarum Upsaliæ

    Författare :Laurentius Olai Wallius; Andreas Bothvidi; Laurentius Olai Wallius; Uppsala universitet; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  4. 3. Pentas sexta quæstionum theologicarum, in regia Upsaliensium academia, 25. Septembris, studiosis, locos Hafenrefferianis [anaskeyasikōs] disputantibus, propositarum, sub præsidio Laurentii Olai Wallii, ... respondente Olao Unonis Gewaliense. Et præsidis sumptibus impressarum Upsaliæ

    Författare :Laurentius Olai Wallius; Olof Unonius; Laurentius Olai Wallius; Uppsala universitet; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  5. 4. Source and drain engineering in SiGe-based pMOS transistors

    Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

    Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

  7. 5. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Författare :Erik Haralson; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER