Sökning: "shallow junctions"

Hittade 4 avhandlingar innehållade orden shallow junctions.

  1. 1. The influence of process-induced defects on electrical properties of silicon junctions

    Författare :Gert I. Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; tunneling; ; silicon emitter junctions; discrete conductance fluctuation; shallow doping; deep-level transient spectroscopy;

    Sammanfattning : .... LÄS MER

  3. 2. Source and drain engineering in SiGe-based pMOS transistors

    Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

    Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

  4. 3. Microelectronic devices based on ultra-shallow junctions and silicon-on-insulator materials

    Författare :Anders Söderbärg; Uppsala universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : .... LÄS MER

  5. 4. Modeling and characterization of novel MOS devices

    Författare :Stefan Persson; KTH; []
    Nyckelord :MOSFET; SiGe; high-k dielectric; metal gate; mobility; charge sheet model; retrograde channel structure; intrinsic charge; intrinsic capacitance; contact resistivity;

    Sammanfattning : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. LÄS MER