Sökning: "InGaAs"

Visar resultat 26 - 30 av 74 avhandlingar innehållade ordet InGaAs.

  1. 26. Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors

    Författare :Linda Höglund; Per-Olof Holtz; Mattias Hammar; Stefan Johansson; Sanjay Krishna; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : This thesis presents results from the development of quantum dot (QD) based infrared photodetectors (IPs). The studies include epitaxial growth of QDs, investigations of the structural, optical and electronic properties of QD-based material as well as characterisation of the resulting components. LÄS MER

  3. 27. Metamorphic Heterostructures and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Sammanfattning : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. LÄS MER

  4. 28. Design and Characterization of 1.3-1.6 µm Metamorphic Materials and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor laser; molecular beam epitaxy; InGaAs quantum well; graded buffer layer; metamorphic heterostructures;

    Sammanfattning : The development of fiber-optical networks for broad-band access is expected to create a huge market for laser transmitters in the 1.3-1.55 µm wavelength range. The existing InP-based lasers have poor temperature stability. LÄS MER

  5. 29. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects

    Författare :Jie Sun; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Ballistic Transport; InGaAs InP 2DEG; Nanoelectronics;

    Sammanfattning : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. LÄS MER

  7. 30. Vertical Cavity Surface Emitting Lasers for Access Network Applications

    Författare :Emma Söderberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; highly strained InGaAs; single mode emission; Vertical Cavity Surface Emitting Lasers VCSELs ; inverted surface relief; high speed modulation;

    Sammanfattning : .... LÄS MER