Sökning: "InGaAs"
Visar resultat 6 - 10 av 74 avhandlingar innehållade ordet InGaAs.
6. Vertical III-V Nanowire MOSFETs
Sammanfattning : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. LÄS MER
7. III-V Devices for Emerging Electronic Applications
Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER
8. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER
9. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators
Sammanfattning : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). LÄS MER
10. RF and Noise Optimization of Pseudomorphic inP HEMT Technology
Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER