Sökning: "Gate drive"

Visar resultat 1 - 5 av 31 avhandlingar innehållade orden Gate drive.

1. 1. Gate Control and System Aspects of Silicon Carbide JFETs

   Författare :Björn Ållebrand; KTH; []
   Nyckelord :Power JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on.;

   Sammanfattning : .... LÄS MER

3. 2. On Reliability of SiC Power Devices in Power Electronics

   Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

4. 3. On SiC JFET converters: components, gate-drives and main-circuit conditions

   Författare :Björn Ållebrand; Hans-Peter Nee; Lutz Josef; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power JFET; SiC JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on; Modeling; Commutation transients; Electric power engineering; Elkraftteknik;

   Sammanfattning : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. LÄS MER

5. 4. Metal Gate Technology for Advanced CMOS Devices

   Författare :Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
   Nyckelord :Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

   Sammanfattning : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. LÄS MER

7. 5. On Gate Drivers and Applications of Normally-ON SiC JFETs

   Författare :Dimosthenis Peftitsis; Hans-Peter Nee; Johann Walter Kolar; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Normally-ON Junction Field-Effect Transistors JFETs ; Gate-Drive Circuits; Protection circuits; High-Efficiency Converters.; Järnvägsgruppen - Elsystem; Järnvägsgruppen - Elsystem;

   Sammanfattning : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. LÄS MER