Sökning: "Power JFET"

Visar resultat 1 - 5 av 7 avhandlingar innehållade orden Power JFET.

  1. 1. On SiC JFET converters: components, gate-drives and main-circuit conditions

    Författare :Björn Ållebrand; Hans-Peter Nee; Lutz Josef; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power JFET; SiC JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on; Modeling; Commutation transients; Electric power engineering; Elkraftteknik;

    Sammanfattning : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. LÄS MER

  3. 2. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Författare :Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
    Nyckelord :Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

  4. 3. On Reliability of SiC Power Devices in Power Electronics

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  5. 4. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    Författare :Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. LÄS MER

  7. 5. Gate Control and System Aspects of Silicon Carbide JFETs

    Författare :Björn Ållebrand; KTH; []
    Nyckelord :Power JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on.;

    Sammanfattning : .... LÄS MER