Sökning: "stray inductance"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden stray inductance.
1. Run-Up Transient Analysis for Salient Pole Wound Field Synchronous Motors : Field winding and power electronics implications for a smoother and cooler asynchronous start
Sammanfattning : Salient Pole Wound Field Synchronous Machines have better efficiency at full load than asynchronous machines of the same capability. Moreover, where asynchronous machines need inherently to draw a magnetizing current from the grid, Salient Pole Wound Field Synchronous Machines can work efficiently at unity power factor. LÄS MER
2. Voltage Transients in the Field Winding of Salient Pole Wound Synchronous Machines : Implications from fast switching power electronics
Sammanfattning : Wound Field Synchronous Generators provide more than 95% of the electricity need worldwide. Their primacy in electricity production is due to ease of voltage regulation, performed by simply adjusting the direct current intensity in their rotor winding. LÄS MER
3. Studies on Current Commutation in Hybrid DC-breakers
Sammanfattning : Compared to conventional AC-circuit breakers, a DC-breaker has to act fast and force the current down to zero. Many different DC-breaker topologies are available, and this thesis is focused on the hybrid DC-breaker comprising a mechanical switch and high power semiconductors. LÄS MER
4. High Efficiency Inductive Power Transfer Systems for Vehicle Charging
Sammanfattning : Awareness of climate change due to greenhouse gas emissions and air pollution has led to a transition from internal combustion engine vehicles to electric vehicles. Wireless charging by inductive power transfer is a promising solution for charging electric vehicles. LÄS MER
5. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER