Sökning: "finger temperature"

Visar resultat 1 - 5 av 38 avhandlingar innehållade orden finger temperature.

  1. 1. Cold exposure and thermal comfort among patients in prehospital emergency care : innovation research in nursing

    Författare :Jonas Aléx; Britt-Inger Saveman; Stig Karlsson; Ulf Björnstig; Inggard Lereim; Umeå universitet; []
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; thermal comfort; thermal discomfort; cold exposure; cold stress; hypothermia; patients’ experiences; active warming; prehospital emergency care; finger temperature; back temperature; omvårdnadsforskning med medicinsk inriktning; Caring Sciences;

    Sammanfattning : BackgroundPatients’ cold exposure is a neglected problem in prehospital emergency care. Cold stress increases pain and anxiety and contributes to fear and an overall sense of dissatisfaction. When left untreated, cold stress disturbs vital body functions until ultimately reaches hypothermia. LÄS MER

  3. 2. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

  4. 3. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER

  5. 4. Laser Doppler Flowmetry and Imaging: Methodological Studies

    Författare :Siv Bornmyr; Malmö Institutionen för kliniska vetenskaper; []
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Clinical physics; digital photography.; cold intolerance; sympathetic nervous system; flow cessation external pressure; skin temperature; thermography; skin blood flow; laser doppler imaging; Laser doppler flowmetry; radiology; tomography; medical instrumentation; Klinisk fysiologi; radiologi; tomografi; medicinsk instrumentering;

    Sammanfattning : Laser Doppler flowmetry (LDF) and laser Doppler imaging (LDI) are modern methods for non-invasive and continuous assessment of skin blood flow. The techniques are based on the phenomenon that monochromatic light transilluminating a perfused tissue is spectrally broadened owing to scattering by moving blood cells. LÄS MER

  7. 5. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER