Sökning: "deposited dielectrics"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden deposited dielectrics.

1. 1. Deposition of high quality thin dielectrics on silicon

   Författare :Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

   Sammanfattning : .... LÄS MER

3. 2. Control of Defects and Subgrains in Epitaxial Perovskite Thin Films

   Författare :Lars Ryen; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; thin film evolution; La0.70Ba0.30MnO3; epitaxial perovskite films; Keywords: TEM; dielectrics; EELS; SrTiO3; YBa2Cu3O7-x; superconductors; colossal magnetoresistance;

   Sammanfattning : This work concerns the microstructure of epitaxial (001) perovskite thin films, studied by transmission electron microscopy (TEM), in particular high resolution TEM, electron energy-loss spectroscopy (EELS), and energy dispersive x-ray analysis. The perovskites exhibit interesting superconducting, dielectric, and magnetic properties. LÄS MER

4. 3. Impact of Ionizing Radiation on 4H-SiC Devices

   Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

   Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER

5. 4. Metal Gate Technology for Advanced CMOS Devices

   Författare :Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
   Nyckelord :Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

   Sammanfattning : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. LÄS MER

7. 5. Characterization of dielectric layers for passivation of 4H-SiC devices

   Författare :Maciej Wolborski; Anders Hallén; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Elektrofysik;

   Sammanfattning : Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. LÄS MER