Sökning: "Mo Si"

Visar resultat 1 - 5 av 34 avhandlingar innehållade orden Mo Si.

1. 1. Design and process issues of junction- and ferroelectric-field effect transistors in silicon carbide

   Författare :Sang-Mo Koo; KTH; []
   Nyckelord :;

   Sammanfattning : In today’s solid-state electronics, Si and SiO2 are thedominant materials used. However, new materials such as SiC orferroelectrics are required for some special applications sincesuperior characteristics can be achieved in electronic devices. LÄS MER

3. 2. High temperature properties of polycrystalline Mo(Si,Al)2: compression and oxidation

   Författare :Aina Edgren; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; hot compression; Mo Si; Al 2; microstructure; heating element; mechanical properties; oxidation;

   Sammanfattning : Electrification of industrial heating processes holds great promise for reducing CO2 emissions. Large furnaces operating at elevated temperatures and in demanding atmospheres are complicated but indeed important to electrify. LÄS MER

4. 3. Microstructure and high temperature properties of Mo(Si,Al)2 - The effect of particle strengthening and alloying

   Författare :Aina Edgren; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microstructure; particle strengthening; Mo Si; Al 2; oxidation; alloying; high temperature mechanical properties;

   Sammanfattning : High temperature heating processes within the steel industries result in significant emissions of CO2, primarily due to the combustion of fossil fuels. Electrification of these processes, such as through the implementation of resistive heating elements, holds great promise for reducing emissions. LÄS MER

5. 4. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si

   Författare :Thorbjörn Jemander; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). LÄS MER

7. 5. The use of self-aligned Ti silicide in integrated Si technology

   Författare :Wlodek Kaplan; KTH; []
   Nyckelord :;

   Sammanfattning : The performance and cost efficiency of integrated circuits(IC) are constantly improved by a miniaturization of theindividual device dimensions. As a consequence, the materialand electrical properties of conductors and contacts becomecritical, and fabrication technology development meets newchallenges from the continuous reduction of devicedimensions. LÄS MER