Sökning: "Gallium Arsenide"

Visar resultat 21 - 25 av 33 avhandlingar innehållade orden Gallium Arsenide.

1. 21. Hot-wall MOCVD of N-polar group-III nitride materials

   Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

3. 22. NbTiN for improved superconducting detectors

   Författare :Julien Zichi; Val Zwiller; Gregory Gol'tsman; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; superconducting nanowire sngle photon detector; SNSPD; niobium titanium nitride; NbTiN; reactive co-sputtering; quantum communications; quantum sensing; Fysik; Physics;

   Sammanfattning : The physics of single photons is fascinating, by manipulating them we can observe and probe quantum effects. Doing so requires the fabrication and utilization of single photon sources, of which many types have been developed including quantum dots, trapped atoms and ions, and color centers. LÄS MER

4. 23. Non-galvanic Interconnects for Millimeter-wave Systems

   Författare :Ahmed Adel Hassona; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interconnects; THz; taper; waveguide transition; MMIC; InP; WR-6.5.; slot antenna; CMOS; eWLB; LTSA; finline; millimeter-wave; SiC; D-band; GaAs;

   Sammanfattning : Fueled by the increasing demand for higher data rates, millimeter-wave (mmW) systems emerged as a candidate that can provide multi-gigabit per second (Gb/s) transmission. This demand is mainly driven by modern communication systems and several other wireless and sensing applications such as production quality inspection and imaging systems. LÄS MER

5. 24. Engineering Epitaxial Graphene for Quantum Metrology

   Författare :Hans He; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Epitaxial Graphene; Magnetotransport; Quantum Resistance Metrology; Chemical Doping;

   Sammanfattning : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. LÄS MER

7. 25. Growth and characterisation of InGaAs-based quantum dots-in-a-well infrared photodetectors

   Författare :Linda Höglund; Per-Olof Holtz; Mattias Hammar; Stefan Johansson; Sanjay Krishna; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : This thesis presents results from the development of quantum dot (QD) based infrared photodetectors (IPs). The studies include epitaxial growth of QDs, investigations of the structural, optical and electronic properties of QD-based material as well as characterisation of the resulting components. LÄS MER