Sökning: "BJT"

Visar resultat 21 - 25 av 29 avhandlingar innehållade ordet BJT.

1. 21. Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications

   Författare :Saleh Kargarrazi; Carl-Mikael Zetterling; Erik Lind; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : Silicon Carbide (SiC) is suggested as a superior material for high temperature and high power electronic applications, thanks to its excellent properties. In this thesis, design and measurements of integrated circuits in bipolar 4H-SiC aiming for high temperature power applications are reported. LÄS MER

3. 22. Radiation Hardness of 4H-SiC Devices and Circuits

   Författare :Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
   Nyckelord :Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER

4. 23. Impact of Ionizing Radiation on 4H-SiC Devices

   Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

   Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER

5. 24. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

   Författare :Erik Danielsson; KTH; []
   Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

   Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

7. 25. Modelling of High Power SOI Vertical DMOS Transistors and Flip-chip Packages

   Författare :Kuntjoro Pinardi; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Conductive Adhesive; self-heating; Unclamped Inductive Switching; ACA; vertical DMOS; integration; Flip-chip; UIS; SOI;

   Sammanfattning : Part I: Vertical DMOS Transistors System level integration is a major trend in the electronic industry at the moment. For automotive applications in particular it is desirable to integrate CMOS logic circuits and different types of power devices. LÄS MER