Sökning: "wide band gap devices"
Visar resultat 11 - 15 av 41 avhandlingar innehållade orden wide band gap devices.
11. The synthesis, characterization and device fabrication of ZnO, NiO and their composite nanostructures
Sammanfattning : Electronics industry has been revolutionized since last few decades because of the fabrication of electronic devices by using nanoscale based materials. But the more innovative feature in the electronic devices is the use of transparent materials, which makes the transparent electronic devices as one of the most interesting research field in nanoscience and nano-technology now a days. LÄS MER
12. Fabrication and characterization of ZnO nanostructures for sensing and photonic device applications
Sammanfattning : Nanotechnology is an emerging inter-disciplinary paradigm which encompasses diverse fields of science and engineering converge at the nanoscale. This nanoscale science and nanostructure engineering have well demonstrated in the fabrication of sensors/transducers devices with faster response time and better sensitivity then the planer version of the sensor’s configurations. LÄS MER
13. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication
Sammanfattning : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. LÄS MER
14. Fabrication and Characterization of 3C- and4H-SiC MOSFETs
Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER
15. Simulation and Optimization of SiC Field Effect Transistors
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER
