Sökning: "small-signal equivalent circuit"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden small-signal equivalent circuit.

  1. 1. Small-signal, large-signal and noise modelling of HEMTs

    Författare :Mikael Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; small-signal equivalent circuit; direct extraction; L-network; MMIC_lib; noise model; TRL-calibration; -nerwork; ninlinear model; HEMT; HFET; Y-factor measurement; #928; coldFET measurement; method; power-spectrum measurement;

    Sammanfattning : .... LÄS MER

  3. 2. Symmetrical FET Modeling

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; switch model; symmetrical model; nonlinear model; small-signal model; GaAs; Microwave FET; GaN;

    Sammanfattning : This thesis deals with empirical modeling of symmetrical Field-Effect Transistors (FETs). It covers three distinct topics within the areas of modeling and parameter extraction of microwave FETs.First, the symmetry of FET devices is addressed. Such devices are often used in transceivers as a building block for switches. LÄS MER

  4. 3. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

    Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER

  5. 4. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Författare :Andreas Westlund; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; self-switching diode; noise-equivalent power; SSD; graphene; zero-bias; InAs; InGaAs; terahertz; detector;

    Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER

  7. 5. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER