Sökning: "deep electron traps"
Visar resultat 1 - 5 av 10 avhandlingar innehållade orden deep electron traps.
1. Preparation and electrical characterization of silicon structures formed by wafer bonding
Sammanfattning : .... LÄS MER
2. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
3. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material
Sammanfattning : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. LÄS MER
4. Advanced III-Nitride Technology for mm-Wave Applications
Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER
5. Electronic properties of intrinsic defects and impurities in GaN
Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER