Sökning: "Low bandgap"

Visar resultat 16 - 20 av 116 avhandlingar innehållade orden Low bandgap.

  1. 16. Band gap engineering in Cu2ZnGexSn1-xS4 thin film solar cells

    Författare :Nishant Saini; Charlotte Platzer-Bjorkman; Jes K Larsen; Edgardo Saucedo; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CZTS; CZGTS; bandgap grading; ZTO; KCN-etching; titanium nitride; solar cell; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : Photovoltaics based on kesterite Cu2ZnSnS4 (CZTS) has attracted interest as a sustainable alternative to other thin film technologies due to their tunable material properties and earth-abundance. However, the efficiency is limited to 12. LÄS MER

  3. 17. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  4. 18. Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy

    Författare :Yi Liu; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; STM; XPS; semiconductor surface; III-V; nanostructure modification; nanowires; self-selective formation; atomic scale imaging; Bi incorporation; Fysicumarkivet A:2022:Liu;

    Sammanfattning : In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g. LÄS MER

  5. 19. Electron Transport in Semiconductor Nanowires

    Författare :Mikael Björk; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

    Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER

  7. 20. Synthesis of ZnO, CuO and their Composite Nanostructures for Optoelectronics, Sensing and Catalytic Applications

    Författare :Saima Zaman; Magnus Willander; Omer Nour; Andrey Bakin; Linköpings universitet; []
    Nyckelord :ZnO; CuO; Nanostructures; Low temperature growth; Light emitting diodes; pH sensors;

    Sammanfattning : Research on nanomaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. LÄS MER