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1. 1. Spin Transport in Two-Dimensional Material Heterostructures

   Författare :André Dankert; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Black phosphorous; Topological insulator; h-BN; Silicon; Transistor; Spintronic; MoS2; Graphene; 2D materials; Spin polarized tunnelling; Schottky barrier;

   Sammanfattning : Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. LÄS MER